Radiation-Hardened VLSI SoC and RAM – Design Features for Bulk Silicon CMOS Technologies

The effect of various types radiation and heavy nuclear particles on VLSI fabricated using CMOS technologies for bulk silicon at a level 250–90 nm is analyzed. Developed certified test crystals (TC) are constructive-topological circuit solutions elements digital libraries, complex-functional RAM blocks peripheral mixed-signal designing radiation-hardened the “system-on-chip” (SoC) type category RT (products with an increased resistance). methodology by design (RHBD) has been further developed. For CAD tools, environment was created manufacturing Russian factories available technologies. Based this environment, competitive high-performance processor SoC were created. Basic technical protected RF patents.